Integrated RC-circuits in ALTA-technology on one substrate

To reach the goals of this program - i.e., the realization of integrated RC circuits in AlTa-technology on one substrate - two ways were investigated: first the "single layer technique" with resistors and capacitors from one layer and then the "double layer technique" with a Ta-rich layer for the resistors and an Al-rich layer for the capacitors. The compensation of temperature coefficients of R and C is done by reactive sputtering (AlTa-O) or by use of a sandwich dielectric of AlTa-oxide and SiO2. The double layer technique was optimized with production equipment and reached preproduction standards. Samples of highly stable RC-circuits (active filters) were realized. The technology also includes the integration of crossovers.