Temperature dependence of open-circuit photovoltage of a back-surface field semiconductor junction

Temperature dependence of the open-circuit photovoltage of a back surface field, diffused silicon junction has been studied analytically, including the effect of bandgap narrowing in the heavily doped back surface region. Open circuit voltage of a BSF structure has been found to be slightly less dependent on temperature as compared with that of a conventional cell. Further, the behaviour of a BSF cell is found to be relatively insensitive to base layer resistivity. These results support the experimental data published by some investigators on temperature dependence of solar cells.