Switching properties of highly doped Gunn devices in resistive circuits

The switching behaviour of Gunn devices in the doping range between 7 × 10 ¹⁴ cm ^-3 and 5 × 10 ¹⁵ cm ^-3 acting in resistive circuits is investigated by numerical methods. Carrier transport equations including diffusion are solved for the device in combination with external circuit equations. The switching time is below 100 psec down to less than 10 psec depending on load and doping. The current pulse amplitude is about 40% of the peak current.