Deep level transient spectroscopy for diodes with large leakage currents
Abstract
A Deep Level Transient Spectroscopy (DLTS) system is described for measuring deep levels in diodes exhibiting large leakage currents. A capacitance bridge employing the diode to be tested along with a dummy diode of similar characteristics is used. The DLTS spectrum of a leaky GaAs planar diode is measured and compared to experimental results obtained with two standard DLTS systems. It is shown that measurements with the standard systems are impossible in certain temperature ranges because of overloading problems. The approach described here, however, gives the DLTS spectrum between 77° and 300° K.
- Publication:
-
Review of Scientific Instruments
- Pub Date:
- December 1979
- DOI:
- 10.1063/1.1135761
- Bibcode:
- 1979RScI...50.1571D
- Keywords:
-
- Gallium Arsenides;
- Semiconductor Diodes;
- Spectroscopy;
- Capacitance;
- Leakage;
- Pulse Generators;
- Semiconductor Junctions;
- Transient Response;
- Volt-Ampere Characteristics;
- Instrumentation and Photography;
- 71.25.Tn;
- 72.20.-i;
- Conductivity phenomena in semiconductors and insulators