Parameters controlling the photovoltaic properties of the copper sulfide/cadmium sulfide heterojunction
Abstract
The parameters controlling the photovoltaic properties of the Cu2S/CdS heterojunction were investigated. Results indicate that the behavior of the short circuit current and the open circuit voltage are describable in terms of a deep, donor-like level in the CdS region adjacent to the metallurgical interface. The relative probability of tunneling from this level to the Cu2S is derived, as is the probability of tunneling from the level to the CdS conduction band.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- February 1979
- Bibcode:
- 1979PhDT........74H
- Keywords:
-
- Cadmium Sulfides;
- Copper Sulfides;
- Electro-Optics;
- Heterojunction Devices;
- Capacitance;
- Mathematical Models;
- Short Circuits;
- Electronics and Electrical Engineering