Infrared extrinsic Mosfet detector with and without memory, based upon epitaxial silicon/germanium alloy

The terminal characteristics of the photodetector and the basic characteristics of the gold impurity centers were analyzed and demonstrated. It is found that the photoresponse is negative or positive and depends on the operational modes (with and without preset), relative doping concentrations and the bias-applied conditions. The experimental results match the theoretical predictions. An attempt to examine the effects of infrared radiation on gold impurity centers in a p-channel MOSFET fabricated on Si/Ge alloy is reported. A shift in the gold energy level was obtained. The possibility for arbitrary selection of wavelength for maximal response through the control of permittivity, by the use of epitaxial alloys is pointed out.