Intervalley Transfer in N-Type Germanium at 77 Degrees K.

The current density versus electric field characteristics of n-type germanium for resistivities ranging from 0.3 ohms-cm to 30 ohms-cm were measured at a lattice temperature temperature of 77 K for the electric field applied in the 100, 110, and 111 crystallographic directions. Data are also shown for 2 ohm-cm and 0.4 ohm-cm samples which are compensated with indium. From this data the conductivity anisotropy was observed and analyzed in terms of the repopulation of carriers between the different valleys. The experimental repopulation is given as a function of electric field and sample resistivity.