Breakdown delay and excitation of ionization waves in p-n junctions
Abstract
It is noted that the experiments of Grekhov and Kardo-Sysoev (1979) have shown an 'anomalously' long delay in the breakdown of silicon p-n junctions, making it possible to produce current drops greater than 20 A in times less than 0.5 nsec. It has been shown that the effect cannot be explained by the standard interpretation of the increase in the impact-ionization current. The present paper offers an explanation for the reported effect.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- August 1979
- Bibcode:
- 1979PZhTF...5..961G
- Keywords:
-
- P-N Junctions;
- Plasma Waves;
- Semiconductor Plasmas;
- Silicon Junctions;
- Time Lag;
- Wave Excitation;
- Breakdown;
- Carrier Injection;
- Carrier Mobility;
- Ionization;
- Electronics and Electrical Engineering