Temperature dependent characteristics of a PIN avalanche photodiode /APD/ in Ge, Si and GaAs
Abstract
A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs PIN avalanche photodiodes. The temperature coefficient of avalanche breakdown voltage in a high field region is studied. Finally the response time of a PIN APD in these materials is discussed.
- Publication:
-
Optical and Quantum Electronics
- Pub Date:
- March 1979
- Bibcode:
- 1979OptQE..11..109S
- Keywords:
-
- Avalanche Diodes;
- Gallium Arsenides;
- P-I-N Junctions;
- Photodiodes;
- Temperature Effects;
- Germanium;
- Silicon Junctions;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering