Heat-induced depolarization currents in Si3N4 films
Abstract
Experimental results are presented on heat-induced depolarization currents (HIDC) in Al-Si3N4-Ge MOS structures. Five HIDC peaks were observed after polarization of Si3N4 at a temperature of 93 K and subsequent heating up to 500 K. An accurate method is developed for analyzing HIDC, which makes it possible to determine charge distribution and total charge density.
- Publication:
-
Mikroelektronika
- Pub Date:
- October 1979
- Bibcode:
- 1979Mikro...8..455V
- Keywords:
-
- Depolarization;
- Dielectrics;
- Mis (Semiconductors);
- Semiconducting Films;
- Silicon Nitrides;
- Aluminum;
- Germanium;
- Integral Equations;
- Temperature Effects;
- Solid-State Physics