InGaAsP/InP Native Oxide Stripe Lasers

This letter reports on InGaAsP/InP native oxide stripe lasers that use the high resistivity of anodic oxide films of InP. The fabrication of these devices is described, and special features of the lasers are discussed. It is noted that the crystals suffer from less damage than conventional SiO2 stripe lasers, that the anodic oxide film is grown in the liquid and thus is less likely to form pinholes, and that steps between the crystal and the film surface are low.