Measurements of interface recombination velocity by capacitance/collection efficiency variation in Cu2S/CdS heterojunctions
Abstract
The interface recombination velocity S sub I in the Cu2S/CdS heterojunction has been measured by a new technique using junction capacitance and collection efficiency. The method utilizes changes in the junction field strength due to the photocharging of traps in the depletion region, as measured by junction capacitance. The variation in junction collection efficiency is related to the field strength changes to obtain S sub I values of order of approximately 3 times 10 to the 5th power cm/s. These compare well with estimates from other experiments and simple theoretical predictions. This measurement technique could be applied to other systems, so long as photosensitive trapping states exist that alter the depletion layer width upon external illumination.
- Publication:
-
Journal of Vacuum Science Technology
- Pub Date:
- October 1979
- DOI:
- 10.1116/1.570209
- Bibcode:
- 1979JVST...16.1402W
- Keywords:
-
- Cadmium Sulfides;
- Copper Sulfides;
- Electron Recombination;
- Heterojunction Devices;
- Recombination Reactions;
- Semiconductor Junctions;
- Band Structure Of Solids;
- Capacitance;
- Reaction Kinetics;
- Solid-Solid Interfaces;
- Solid-State Physics