Deep proton-isolated lasers and proton range data for InP and GaSb

Deep proton-isolated (GaAl)As/GaAs lasers have been fabricated in structures where the active layer was 40 microns from the surface. Proton-isolation masks have been made enabling high proton energies, up to 2.5 MeV, to be used. By chemically delineating the proton-bombarded regions studies have been made of proton penetration in (GaAl)As/GaAs laser structures. This work was extended to include a study of proton penetration in other III-V compound semiconductors and results show that the energy-range data for GaAs, InP and GaSb is very similar. The characteristics of deep proton-isolated (GaAl)As/GaAs lasers have been investigated and results are given which show that improvements to the external quantum efficiency, peak power operation and reliability can be realized by using this technique.