X-ray total-external-reflection-Bragg diffraction: A structural study of the GaAs-Al interface
Abstract
A new technique utilizing conventional x-ray diffraction in conjunction with total external reflection has provided a powerful tool for studying ordered interfaces and surface phenomena. It has been used in this work to study the details of the interface region of a molecular beam epitaxially grown Al single crystal on a molecular beam epitaxially grown GaAs single-crystal substrate. A simple model including variations of the lattice parameter and disorder in the interface region is in agreement with these experimental results.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- November 1979
- DOI:
- 10.1063/1.325845
- Bibcode:
- 1979JAP....50.6927M
- Keywords:
-
- 68.48.+f;
- 61.10.Fr