Characteristics of n-type InSb
Abstract
The paper reports photoconductive data on n-type InSb detectors made from a high quality state-of-the-art ingot. From Hall measurements, impurity carrier concentration was found to be 5.5 x 10 to the 13th per cu cm at 77 K and recombination center density was estimated to be 8 x 10 to the 13th per cu cm. Noise, responsivity, and photoconductive lifetime as a function of temperature and background photon flux density (2 x 10 to the 14th to 8 x 10 to the 15th photons/sq cm/sec) were measured. It is shown that at temperatures up to 200 K recombination through Shockley-Read centers limits the photoconductive lifetime; above 250 K an Auger type process determines the photoconductive lifetimes.
- Publication:
-
Infrared Physics
- Pub Date:
- October 1979
- DOI:
- 10.1016/0020-0891(79)90074-5
- Bibcode:
- 1979InfPh..19..563P
- Keywords:
-
- Indium Antimonides;
- Life (Durability);
- N-Type Semiconductors;
- Photoconductors;
- Radiation Effects;
- Temperature Effects;
- Charge Carriers;
- Electron Recombination;
- Hall Effect;
- Ingots;
- Performance Tests;
- Radiant Flux Density;
- Radiation Detectors;
- Electronics and Electrical Engineering