Photoconductivity of graded-gap Cd xHg 1- xTe∗
Abstract
Photoconductivity measurements have been performed at 77 and 300 K in the 0.5-6 μm wave-range on samples cut from graded-gap epitaxial Cd xHg 1- xTe layers and compared with a simple theoretical model. The possible application of epitaxial graded-gap semiconductor layers as broad range photoconductive detectors is discussed.
- Publication:
-
Infrared Physics
- Pub Date:
- March 1979
- DOI:
- 10.1016/0020-0891(79)90024-1
- Bibcode:
- 1979InfPh..19..179P
- Keywords:
-
- Cadmium Tellurides;
- Gaps;
- Infrared Detectors;
- Mercury Tellurides;
- Photoconductivity;
- Semiconductor Devices;
- Absorptivity;
- Crystal Surfaces;
- Detection;
- Epitaxy;
- Homogeneity;
- Photoconductors;
- Recombination Reactions;
- Solid-State Physics