An improved computational method for noise parameter measurement
Abstract
Conventional methods for noise parameter measurement for linear noisy two-ports have been improved by introducing a computational method for evaluating measured admittance errors. Derivation and comparison with a conventional method are given. Noise parameters of a packaged 0.5-micron gate-length GaAs MESFET (NE38806) were successfully measured by using the proposed technique.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- June 1979
- DOI:
- Bibcode:
- 1979ITMTT..27..612M
- Keywords:
-
- Electrical Impedance;
- Electromagnetic Noise Measurement;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Schottky Diodes;
- Computer Programs;
- Electronic Packaging;
- Error Analysis;
- Failure Analysis;
- Gates (Circuits);
- Metal Surfaces;
- Electronics and Electrical Engineering