Millimeter-wave CW IMPATT diodes and oscillators
Abstract
This paper summarizes the current state of the art of silicon CW millimeter-wave IMPATT diodes and oscillators in the frequency range from 30 to 250 GHz. Design procedures, fabrication, and packaging technology are reviewed, and the current performance of diode oscillators is reported. A brief account of present device reliability is also presented. The contrast between maturing device technology below 100 GHz and largely laboratory-based technology at higher frequencies is discussed. Finally, a prognosis of future developments is offered.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- May 1979
- DOI:
- Bibcode:
- 1979ITMTT..27..483M
- Keywords:
-
- Avalanche Diodes;
- Microwave Oscillators;
- Millimeter Waves;
- Silicon Junctions;
- Systems Engineering;
- Atmospheric Attenuation;
- Dopes;
- Electronic Packaging;
- Graphs (Charts);
- Ion Implantation;
- Quartz;
- Reliability Analysis;
- Substrates;
- Thermal Resistance;
- Electronics and Electrical Engineering