High peak pulse power silicon double-drift IMPATT diodes
Abstract
The performance of high peak pulse power silicon double-drift IMPATT devices operated at medium pulse repetition frequency are discussed. Several devices were characterized and achieved more than 45-W peak pulse power with 10-percent duty cycle at 9.7 GHz. Conversion efficiencies in the order of 9.7-11.2 percent were observed. These results compare with previously reported 19-W peak power, 10-percent duty-cycle, and 9.5-percent efficiency.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- May 1979
- DOI:
- 10.1109/TMTT.1979.1129647
- Bibcode:
- 1979ITMTT..27..450P
- Keywords:
-
- Avalanche Diodes;
- Network Synthesis;
- Power Efficiency;
- Pulse Frequency Modulation;
- Silicon Junctions;
- Chips (Electronics);
- Epitaxy;
- Microwave Circuits;
- Superhigh Frequencies;
- Temperature Effects;
- Electronics and Electrical Engineering