23-GHz band GaAs MESFET reflection-type amplifier
Abstract
A new method is presented for applying a packaged GaAs MESFET to an amplifier in the frequency region above 20 GHz, using package resonance as a positive feedback element and operating GaAs MESFET as a negative resistance two-terminal device in a reflection-type amplifier. Experimentally, a 6-dB noise figure in the 23-GHz band and a 8-dB noise figure in the 27-GHz band have been achieved.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- May 1979
- DOI:
- Bibcode:
- 1979ITMTT..27..408T
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Negative Resistance Devices;
- Schottky Diodes;
- Electrical Impedance;
- Feedback Circuits;
- Impedance Measurement;
- Optical Waveguides;
- Power Efficiency;
- Reflectance;
- Electronics and Electrical Engineering