A unified approach to the design of wide-band microwave solid-state oscillators
Abstract
The paper demonstrates the utility, and advantages of a negative resistance approach to the design of three-terminal device broadband tunable oscillators at microwave frequencies. A theorem concerning negative resistance is presented and found to lead to a well-defined design procedure. This technique is developed through two design examples: a 5.9-12.4-GHz MESFET oscillator and a 2-8.4-GHz bipolar transistor oscillator.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- May 1979
- DOI:
- Bibcode:
- 1979ITMTT..27..379B
- Keywords:
-
- Bipolar Transistors;
- Field Effect Transistors;
- Microwave Oscillators;
- Negative Resistance Circuits;
- Network Synthesis;
- Block Diagrams;
- Broadband;
- Electrical Impedance;
- Equivalent Circuits;
- Microwave Frequencies;
- Solid State Devices;
- Tuning;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering