Thin-film semiconductor NO/x/ sensor
Abstract
A thin-film semiconductor NO(x) sensor has been fabricated by reactive RF sputtering from a tin target. The gas detection is based on monitoring the sensor resistance change caused by NO(x) chemisorption on the sensor surface. The sensor is highly sensitive and selective toward detecting NO(x) in air. The chemical composition of the film was investigated by AES and ESCA. A simple chemisorption model is presented to explain the observed phenomena.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- December 1979
- DOI:
- Bibcode:
- 1979ITED...26.1875C
- Keywords:
-
- Chemisorption;
- Gas Detectors;
- Nitrogen Oxides;
- Oxide Films;
- Semiconductor Devices;
- Thin Films;
- Air Sampling;
- Pollution Monitoring;
- Reaction Kinetics;
- Semiconducting Films;
- Test Chambers;
- Water Vapor;
- Instrumentation and Photography