A novel beam lead GaAs Schottky-barrier diode fabricated by using thick polyimide film
Abstract
A novel high-performance beam lead GaAs Schottky-barrier mixer diode is developed for use in a SHF receiving system. The structure, fabrication process, electric characteristics, and reliability of the device are described, along with the microwave characteristics of an SHF downconverter made with this device. The use of an improved thick polyimide film and double epitaxial layer minimized parasitic capacitance and series resistance, so that the cutoff frequency exceeds 2000 GHz. The SHF downconverter made with this diode exhibited excellent noise figure and conversion loss, and was very effective in direct reception of TV pictures from satellite broadcasting.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- November 1979
- DOI:
- 10.1109/T-ED.1979.19689
- Bibcode:
- 1979ITED...26.1799H
- Keywords:
-
- Beam Leads;
- Gallium Arsenides;
- Polymeric Films;
- Schottky Diodes;
- Semiconductor Junctions;
- Thick Films;
- Electrical Properties;
- Fabrication;
- Film Thickness;
- Low Noise;
- Polyamide Resins;
- Reliability;
- Satellite Television;
- Superhigh Frequencies;
- Electronics and Electrical Engineering