Large-signal time-domain modeling of avalanche diodes

The main problems associated with the large-signal time-domain simulation of avalanche diodes are considered. A solution procedure for a strictly current-driven, ideal Read, p/+/-n-i-n/+/ diode is described along with some important avalanche generation corrections. Unequal saturated velocities, pseudodiffusion, and the numerical implementation of genuine diffusion effects are analyzed. The modeling of low-field unsaturated velocities is covered, including the modeling of carriers whose velocity-field characteristic contains a negative mobility portion. Consideration is given to the modeling of a range of loads and circuit configurations.