Largesignal timedomain modeling of avalanche diodes
Abstract
The main problems associated with the largesignal timedomain simulation of avalanche diodes are considered. A solution procedure for a strictly currentdriven, ideal Read, p/+/nin/+/ diode is described along with some important avalanche generation corrections. Unequal saturated velocities, pseudodiffusion, and the numerical implementation of genuine diffusion effects are analyzed. The modeling of lowfield unsaturated velocities is covered, including the modeling of carriers whose velocityfield characteristic contains a negative mobility portion. Consideration is given to the modeling of a range of loads and circuit configurations.
 Publication:

IEEE Transactions on Electron Devices
 Pub Date:
 November 1979
 DOI:
 10.1109/TED.1979.19676
 Bibcode:
 1979ITED...26.1718B
 Keywords:

 Avalanche Diodes;
 Computerized Simulation;
 Mathematical Models;
 Signal Analysis;
 Time Response;
 Accuracy;
 Cost Effectiveness;
 Current Density;
 Electric Current;
 Electric Potential;
 Electron Density Profiles;
 Electron Diffusion;
 Network Synthesis;
 Particle Motion;
 Semiconductor Devices;
 Electronics and Electrical Engineering