Subthreshold behavior of uniformly and nonuniformly doped long-channel MOSFET
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- September 1979
- DOI:
- 10.1109/T-ED.1979.19594
- Bibcode:
- 1979ITED...26.1282B
- Keywords:
-
- Field Effect Transistors;
- Ion Implantation;
- Metal Oxide Semiconductors;
- Threshold Currents;
- Volt-Ampere Characteristics;
- Amorphous Semiconductors;
- Capacitance;
- Doped Crystals;
- Planar Structures;
- Silicon;
- Electronics and Electrical Engineering