The effect of hole versus electron photocurrent on microwave-optical interactions in IMPATT oscillators
Abstract
The effect of hole versus electron photocurrent on the microwave properties of IMPATT oscillators is presented and correlated with static I-V characteristics. The composition of the photocurrent was altered by fabricating both flip-chip (FC) and top-mounted (TM) devices and using an optical source with an absorption depth comparable to both the depletion-layer thickness and substrate diffusion length. The importance of the order of magnitude difference in effect of hole versus electron photocurrent is discussed.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- March 1979
- DOI:
- 10.1109/T-ED.1979.19411
- Bibcode:
- 1979ITED...26..232V
- Keywords:
-
- Avalanche Diodes;
- Electron Avalanche;
- Light Modulation;
- Microwave Oscillators;
- Photoelectric Emission;
- Volt-Ampere Characteristics;
- Electromagnetic Interactions;
- Electron Diffusion;
- Holes (Electron Deficiencies);
- P-N Junctions;
- Substrates;
- Electronics and Electrical Engineering