CMOS/SOS EAROM memory arrays
Abstract
A new low-voltage nonvolatile memory cell has been fabricated using standard CMOS/SOS processing. The cell can be programmed at 10 V, conducts 400 micron A when programmed, and can be erased either electrically or with UV light. Using this cell, a family of memories have been built which dissipate only 50 micron W at 5 V, retain data for 17.3 years at 125 C, and have a WRITE/ERASE endurance in excess of 300 cycles.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- October 1979
- DOI:
- 10.1109/JSSC.1979.1051285
- Bibcode:
- 1979IJSSC..14..860S
- Keywords:
-
- Cmos;
- Logic Circuits;
- Read-Only Memory Devices;
- Sos (Semiconductors);
- Transistor Circuits;
- High Voltages;
- P-Type Semiconductors;
- Photomicrographs;
- Electronics and Electrical Engineering