A simple current model for short-channel IGFET and its application to circuit simulation
Abstract
The present paper describes a simple one-dimensional current model for an enhancement-insulated field-effect transistor (EIGFET), taking account of the carrier drift-velocity effect and short-channel effect. The model has been used for simulating various characteristics of an EIGFET of channel length of about 1 micron and up, and in the simulation of the waveforms of a ring oscillator where each element transistor has a 1-micron channel length. In either case, fairly good agreement was obtained between simulated results and measurements.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- April 1979
- Bibcode:
- 1979IJSSC..14..358D
- Keywords:
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- Computerized Simulation;
- Field Effect Transistors;
- Mathematical Models;
- Volt-Ampere Characteristics;
- Carrier Mobility;
- Channels;
- Drift Rate;
- Waveforms;
- Electronics and Electrical Engineering