GaInAsP/InP DH lasers and related fabricating techniques for integration
Abstract
Liquid phase epitaxy and wet chemical etching techniques are investigated for the purpose of obtaining integrated Ga(x)In(1-x)As(y)P(1-y)/InP lasers. In addition selective growth of a GaInAsP layer on channeled (100) InP substrates is demonstrated. It is reported that a new chemical etchant was found that can etch InP and GaInAsP with smooth surfaces and perpendicular facets, and with which facet and stripe geometries were fabricated. Homoisolation stripe (HIS) DH lasers are also investigated and the dispersion of the lasing wavelength is measured to be + or - 1.2 percent around the 1.22 micron room temperature oscillation wavelength.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- August 1979
- DOI:
- 10.1109/JQE.1979.1070100
- Bibcode:
- 1979IJQE...15..707I
- Keywords:
-
- Epitaxy;
- Etching;
- Gallium Arsenide Lasers;
- Heterojunction Devices;
- Indium Phosphides;
- Semiconductor Junctions;
- Etchants;
- Liquid Phases;
- Solid State Devices;
- Surface Properties;
- Lasers and Masers