Preparation and properties of Ga/1-x/Al/x/As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
Abstract
Recently, Ga(1-x)Al(x)As-GaAs double-heterostructure lasers having low threshold current densities have been grown by metalorganic chemical vapor deposition. In addition to these conventional double-heterostructure lasers, unique laser structures have been grown, e.g., channel-guide, distributed-Bragg-confinement, and single- and multiple-quantum-well lasers. The preparation and performance of these devices are described.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- March 1979
- DOI:
- 10.1109/JQE.1979.1069974
- Bibcode:
- 1979IJQE...15..128D
- Keywords:
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- Heterojunction Devices;
- Laser Materials;
- Semiconductor Lasers;
- Vapor Deposition;
- Current Density;
- Fabrication;
- Gallium Arsenide Lasers;
- Organometallic Compounds;
- Lasers and Masers