Conversion gain of M.E.S.F.E.T. drain mixers
Abstract
A theoretical analysis of the gain properties of MESFET drain mixers is presented. The MESFET model includes the nonlinearity of both the transconductance and the drain resistance. For a special case, a simple analytical expression for the gain is given. Numerical results for a typical example are briefly presented as an illustration.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1979
- DOI:
- 10.1049/el:19790407
- Bibcode:
- 1979ElL....15..567B
- Keywords:
-
- Field Effect Transistors;
- Mixers;
- Network Analysis;
- Semiconductor Devices;
- Signal Processing;
- Matrices (Mathematics);
- Numerical Analysis;
- Power Gain;
- Schottky Diodes;
- Electronics and Electrical Engineering