GaAs power M.E.S.F.E.T.S with a graded recess structure
Abstract
A new recess structure device was developed to improve the field distribution and therefore the performance of GaAs power MESFETS. The linear gain and the output power were improved by 1-2 dB for this structure. The highest output powers obtained are 15 W with 4 dB associated gain at 6 GHz, and 4.3 W with 3 dB associated gain at 11 GHz.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1979
- DOI:
- Bibcode:
- 1979ElL....15..417F
- Keywords:
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- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Power Efficiency;
- Schottky Diodes;
- Bias;
- Gates (Circuits);
- Light Emission;
- Metal Surfaces;
- Superhigh Frequencies;
- Electronics and Electrical Engineering