Internal stress and degradation in short-wavelength AlGaAs double-heterojunction devices
Abstract
Aging tests of incoherently operated zinc-doped double-heterojunction (DH) lasers designed for short-wavelength (0.71-0.72 micron) operation show that the introduction of buffer layers between the substrate and the DH structure leads to a drastic reduction in gradual degradation. This is attributed to a decrease in lattice mismatch stress.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1979
- DOI:
- Bibcode:
- 1979ElL....15..342L
- Keywords:
-
- Aging (Materials);
- Aluminum Gallium Arsenides;
- Heterojunction Devices;
- Residual Stress;
- Semiconductor Lasers;
- Doped Crystals;
- Laser Damage;
- Lasing;
- Thermal Degradation;
- Zinc;
- Electronics and Electrical Engineering