New semiconductor active device - The conductivity-controlled transistor
Abstract
A new semiconductor 3-terminal device has been realized in which a majority-carrier current, flowing in a n(plus)-n-n(plus) structure, is controlled by a minority-carrier current supplied by a forward-biased p(plus)-n junction. The properties of this device are presented and discussed in terms of a physical model.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1979
- DOI:
- 10.1049/el:19790189
- Bibcode:
- 1979ElL....15..267C
- Keywords:
-
- Electrical Resistivity;
- Junction Transistors;
- Semiconductor Devices;
- Volt-Ampere Characteristics;
- Electric Terminals;
- Majority Carriers;
- Minority Carriers;
- P-N Junctions;
- Electronics and Electrical Engineering