Metalorganic C.V.D. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold current - NASA/ADS

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NASA/ADS

Metalorganic C.V.D. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold current

Publication:

Electronics Letters

Pub Date:

March 1979

DOI:

10.1049/el:19790111

Bibcode:

1979ElL....15..156T

Keywords:

Crystal Growth;
Electron Recombination;
Gallium Arsenide Lasers;
Heterojunction Devices;
Threshold Currents;
Vapor Deposition;
Aluminum Gallium Arsenides;
Carrier Injection;
Energy Conversion Efficiency;
Radiative Lifetime;
Solid-Solid Interfaces;
Spontaneous Emission;
Lasers and Masers

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