Mesa-substrate buried-heterostructure GaInAsP/InP injection lasers
Abstract
A new GaInAsP/InP injection laser with buried heterostructure fabricated by single-step epitaxial growth on a mesa substrate is reported. Single longitudinal-mode operation up to 1.4 times the threshold current and linear light-output/current characteristics up to 3 times the threshold current are observed at 1.27 microns.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1979
- DOI:
- 10.1049/el:19790098
- Bibcode:
- 1979ElL....15..134K
- Keywords:
-
- Heterojunction Devices;
- Injection Lasers;
- Laser Outputs;
- Semiconductor Lasers;
- Electrical Properties;
- Epitaxy;
- Laser Modes;
- Optical Communication;
- Lasers and Masers