GaAs MESFET prepared by organometallic chemical vapour deposition
Abstract
GaAs MESFETs with gate dimensions of 1.5 x 300 microns were fabricated in the epitaxial layers grown by organometallic chemical vapour deposition technique. The average saturation velocity in the channel was deduced to be 1.3 x 10 to the 7th cm/s and is equal to that of epitaxial layers grown by AsCl3 chemical vapor deposition. The velocity degraded region was confined to within about 350 A of the interface. A gain of 10 dB and a noise figure of 3 dB with an associated gain of 5.5 dB at 8 GHz were measured.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1979
- DOI:
- 10.1049/el:19790076
- Bibcode:
- 1979ElL....15..105M
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Equipment;
- Vapor Deposition;
- Epitaxy;
- Organometallic Compounds;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering