High-power 11 GHz GaAs hi-lo IMPATT diodes with titanium Schottky barriers
Abstract
Schottky-barrier hi-lo GaAs IMPATT diodes with Ti-Pt-Au contacts have been fabricated for the 10.7-11.7 GHz band. At 180 C junction temperature rise the diodes have produced over 5 W of output power and up to 24% efficiency from an 11 GHz oscillator. Initial life tests show potential for high reliability.
- Publication:
-
Electronics Letters
- Pub Date:
- January 1979
- DOI:
- Bibcode:
- 1979ElL....15...13G
- Keywords:
-
- Avalanche Diodes;
- Energy Conversion Efficiency;
- Gallium Arsenides;
- Microwave Oscillators;
- Schottky Diodes;
- Component Reliability;
- Fabrication;
- Reliability Analysis;
- Superhigh Frequencies;
- Titanium;
- Electronics and Electrical Engineering