Potential and field distributions in highresistivity ionimplanted ptype microresistors
Abstract
Analytical expressions for the IV characteristics, potential distribution V(x) and electricfield intensity distribution F(x) along the channel length of ptype microresistors on ntype silicon substrates are derived. Assuming Gaussian distribution of the impurities produced by ion implantation, the functions V(x), E(x) and IV are tabulated (using the leastsquare method) as a function of the ion dose and energy.
 Publication:

Bulgarian Journal of Physics
 Pub Date:
 1979
 Bibcode:
 1979BlJPh...6...56P
 Keywords:

 Distribution (Property);
 Electric Field Strength;
 Electric Potential;
 Ion Implantation;
 PType Semiconductors;
 VoltAmpere Characteristics;
 Electrical Resistivity;
 Energy Distribution;
 Impurities;
 Least Squares Method;
 Normal Density Functions;
 Silicon Junctions;
 Silicon Oxides;
 Electronics and Electrical Engineering