Negative differential resistance through real-space electron transfer
Abstract
A new mechanism is proposed to obtain negative differential resistance in layered heterostructures for conduction parallel to the interface. The mechanism is based on hot-electron thermionic emission from high-mobility GaAs into low-mobility AlxGa1-xAs. Preliminary calculations indicate that high peak-to-valley ratios can be achieved. The transfer speed is estimated to be of the order of 10-11 s. We further show that the concept of hot-electron thermionic emission can be applicable to a variety of devices.
- Publication:
-
Applied Physics Letters
- Pub Date:
- September 1979
- DOI:
- 10.1063/1.91172
- Bibcode:
- 1979ApPhL..35..469H
- Keywords:
-
- Electron Transfer;
- Gallium Arsenides;
- Heterojunction Devices;
- Hot Electrons;
- Negative Conductance;
- Thermionic Emission;
- Aluminum Gallium Arsenides;
- Carrier Mobility;
- Performance Prediction;
- Solid-Solid Interfaces;
- Electronics and Electrical Engineering;
- 72.20.Ht;
- 73.40.-c;
- 72.20.-i;
- 73.40.Lq;
- High-field and nonlinear effects;
- Electronic transport in interface structures;
- Conductivity phenomena in semiconductors and insulators;
- Other semiconductor-to-semiconductor contacts p-n junctions and heterojunctions