Shallow acceptors and p-type ZnSe
Abstract
Shallow acceptors have been incorporated in ZnSe by liquid-phase epitaxy using Bi as a solvent. Epilayers with Li, Na, N, and P as dopants were proven to be p type by establishing the position of the Fermi level by photocapacitance and photoconductivity measurements, and by measuring the potential drop at biased Schottky barriers.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 1979
- DOI:
- 10.1063/1.91034
- Bibcode:
- 1979ApPhL..35..194K
- Keywords:
-
- Acceptor Materials;
- Doped Crystals;
- Liquid Phases;
- P-Type Semiconductors;
- Schottky Diodes;
- Zinc Selenides;
- Capacitance;
- Energy Spectra;
- Fermi Surfaces;
- Photoconductivity;
- Photoluminescent Bands;
- Photon Density;
- Solid-State Physics;
- 72.80.Ey;
- 71.55.Fr;
- 72.40.+w;
- 78.55.Ds;
- III-V and II-VI semiconductors;
- Photoconduction and photovoltaic effects