Preparation and properties of CuInS2 thin films produced by exposing sputtered Cu-In films to an H2S atmosphere
Abstract
CuInS2 thin films have been made from copper, indium, and hydrogen sulfide gas using a two-step technique which involves exposing Cu-In films produced by sputtering pure copper and pure indium to H2S gas diluted with argon. X-ray diffraction, Auger electron spectroscopy, optical transmission, and electrical measurements were used to identify and characterize the CuInS2. The resulting films were all p type with resistivity in the range 0.1-500 Ω cm and showed a preferred orientation of the (112) plane parallel to the substrate.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 1979
- DOI:
- 10.1063/1.90918
- Bibcode:
- 1979ApPhL..35...24G
- Keywords:
-
- Hydrogen Sulfide;
- Physical Properties;
- Radio Frequency Heating;
- Semiconducting Films;
- Sputtering;
- Thin Films;
- Auger Spectroscopy;
- Copper Sulfides;
- Electrical Measurement;
- Electron Spectroscopy;
- Indium Sulfides;
- Optical Measurement;
- X Ray Diffraction;
- Solid-State Physics;
- 73.60.Fw;
- 81.15.Cd;
- Deposition by sputtering