Dimensioning of temperature-compensated silicon pressure gauges
Abstract
The paper deals with the problem of dimensioning p-type pressure-sensitive resistor layers formed in silicon by diffusion. It examines the temperature dependence of the output signal of the piezoresistive sensors, as well as the possibilities for reducing this dependence by internal compensation. Knowing the parameters of the resistant layers formed by diffusion, a model is proposed for determining the temperature dependence of the variation of the layer resistance. Correctness of the model is proved by the test protocol of the pressure gauges made for parameters as limited in the paper.
- Publication:
-
Acta Technica
- Pub Date:
- 1979
- Bibcode:
- 1979AcTec..89..213K
- Keywords:
-
- Piezoelectric Gages;
- Pressure Gages;
- Semiconductor Devices;
- Size (Dimensions);
- Carrier Mobility;
- P-Type Semiconductors;
- Piezoresistive Transducers;
- Silicon;
- Instrumentation and Photography