CCD processor for InSb array

A silicon integrated circuit employing n-channel MOS (NMOS) and charge-coupled device (CCD) circuits has been designed and fabricated for the purpose of interfacing with an InSb infrared detector array on the focal plane. The resulting focal plane array includes preamplification, correlated double sampling, and 16-element time-delay-and-integration (TDI) for each of 24 channels corresponding with the assumed 16 x 24 element detector array. The signals from individual channels are combined in a 24-channel output multiplexer. This report includes details related to the design of each circuit element and the results of subsequent evaluation. Key problem areas related to cryogenic application of standard analog NMOS circuits are reported and analyzed. It is concluded that NMOS circuitry is ideally suited for cryogenic applications, although further work is required to completely characterize alternative circuits.