Semiconductor device damage assessment for the INCA program: A probabilistic approach
Abstract
Two methods are described for estimating the probability that a given semiconductor device will be damaged by an electrical transient. Both methods are based on existing device damage data which were obtained by step-stressing devices to failure, using rectangular pulses. Both methods require calculation of the time-dependent power waveform in the device, due to application of the transient. One method employs only the largest peak of this power waveform, while the other includes the entire waveform in a convolution integral. Modifications to the DAMTRAC circuit-analysis program are presented.
- Publication:
-
Unknown
- Pub Date:
- March 1978
- Bibcode:
- 1978sdda.rept.....W
- Keywords:
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- Damage;
- Electromagnetic Pulses;
- Semiconductor Devices;
- Computer Programs;
- Probability Density Functions;
- Temperature Effects;
- Solid-State Physics