Semiconductor device damage assessment for the INCA program: A probabilistic approach
Abstract
Two methods are described for estimating the probability that a given semiconductor device will be damaged by an electrical transient. Both methods are based on existing device damage data which were obtained by stepstressing devices to failure, using rectangular pulses. Both methods require calculation of the timedependent power waveform in the device, due to application of the transient. One method employs only the largest peak of this power waveform, while the other includes the entire waveform in a convolution integral. Modifications to the DAMTRAC circuitanalysis program are presented.
 Publication:

Unknown
 Pub Date:
 March 1978
 Bibcode:
 1978sdda.rept.....W
 Keywords:

 Damage;
 Electromagnetic Pulses;
 Semiconductor Devices;
 Computer Programs;
 Probability Density Functions;
 Temperature Effects;
 SolidState Physics