Development of large area PV HgCdTe detectors for 2.06 and 3.85 micrometers
Abstract
The purpose of this program was to develop large area PV HgCdTe detectors for laser receiver systems operating at 2.06 micrometers (Ho:YLF laser) and 3.85 micrometers (DF laser). The work accomplished included: Evaluation of three different methods of crystal growth, the preparation of low acceptor concentration p-type base material by means of gold diffusion, development of a junction formation method utilizing boron ion implantation, and evaluation of those detector characteristics which control operation in the 1 MHz region.
- Publication:
-
Interim Report
- Pub Date:
- May 1978
- Bibcode:
- 1978sbrc.reptR....B
- Keywords:
-
- Infrared Detectors;
- Photometers;
- Photovoltaic Effect;
- Arrays;
- Fabrication;
- Infrared Lasers;
- Ion Implantation;
- Lasers;
- Communications and Radar