H-MOS reliability
Abstract
H-MOS is a new high performance N-channel technology with a 1-picojoule speed power product. This high performance technology is the result of scaling MOS device dimensions. This paper discusses potential failure mechanisms introduced by scaling MOS device dimensions. Experimental data are presented which show H-MOS to be a reliable technology.
- Publication:
-
Reliability Physics 1978
- Pub Date:
- 1978
- Bibcode:
- 1978reph.proc...19R
- Keywords:
-
- Accelerated Life Tests;
- Circuit Reliability;
- Failure Modes;
- Integrated Circuits;
- Metal Oxide Semiconductors;
- Reliability Engineering;
- High Voltages;
- N-Type Semiconductors;
- Performance Tests;
- Reliability Analysis;
- Technology Assessment;
- Electronics and Electrical Engineering