A numerical model for thermal second breakdown

A computer model is developed for simulating reverse bias thermal second breakdown (TSB) transients in thin film diodes. The model performs a one-dimensional electrical and a two-dimensional thermal simulation. Simulations are performed up to the onset of the TSB transition to a high conductance state. This condition is defined as a maximum junction temperature of 700 K. The model is driven by a constant current source and features temperature and electric field dependent avalanche ionization coefficients, temperature, electric field and doping level dependent mobilities, and depletion region space charge effects. Simulations are defined through 271 parameters which specify diode design, thermal conductivity perturbations, and control of the simulation. The program generates graphic output and requires short run times.