Microwave and millimeter wave semiconductor devices
Abstract
An overview is presented of the general capability, present and future, of the newer microwave and millimeter-wave semiconductor devices, with emphasis on specific high power and low noise devices. Improvements in power, frequencies of operation, noise characteristics and reliability have been accomplished with GaAs FETs, GaAs IMPATTs, silicon IMPATTs, and InP Gunn diodes. The area of high peak powers with high average power has given an impetus to the renewed development of GaAs IMPATTs; power combining techniques with these IMPATTs have led to the replacement of medium power tubes.
- Publication:
-
ITC/USA/'78; Proceedings of the International Telemetering Conference
- Pub Date:
- 1978
- Bibcode:
- 1978itc..proc..905F
- Keywords:
-
- Avalanche Diodes;
- Low Noise;
- Microwave Circuits;
- Millimeter Waves;
- Power Conditioning;
- Semiconductor Devices;
- Circuit Reliability;
- Field Effect Transistors;
- Gallium Arsenides;
- Gunn Diodes;
- Indium Phosphides;
- Microwave Oscillators;
- Electronics and Electrical Engineering