GaAs FET power amplifiers for communication transponders
Abstract
Work on the development of GaAs power FET amplifiers in the communication frequency band at 4 GHz is reviewed. The design and performance of a three-stage power amplifier in the 4 GHz band is examined in detail. The amplifier exhibits the following characteristics: output power level of 5 watt, saturated gain of 17 dB, group delay variation of plus or minus .6 nsec over a 250 MHz band, harmonics better than 35 dB down, and efficiency better than 20%. Since FET devices undergo an inherent reduction in gain as the temperature of the device increases, there is a pressing requirement to extend the operating temperature of MESFET amplifiers above and below the room temperature. This paper presents the design and performance of a three-stage temperature-compensated amplifier operating in the 4.0 GHz band over the temperature range from -20 C to 100 C.
- Publication:
-
EASCON 1978; Electronics and Aerospace Systems Convention
- Pub Date:
- 1978
- Bibcode:
- 1978ieee.conf..406D
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Power Amplifiers;
- Temperature Compensation;
- Transponders;
- Amplifier Design;
- Operating Temperature;
- Performance Tests;
- Power Efficiency;
- Power Gain;
- Schottky Diodes;
- Superhigh Frequencies;
- Transistor Amplifiers;
- Electronics and Electrical Engineering